CY7C1062DV33-10BGI

CY7C1062DV33-10BGI, high-performance CMOS Static RAM, 4.6V, 200 mA, 10 ns, BGA

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Price:: US $16.10~16.39 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	16.39 / Piece
110 ~ 500 :	16.22 / Piece
510 ~ 2000 :	16.10 / Piece

PartNumber:: CY7C1062DV33-10BGI

Brand:: Cypress Semiconductor - Cypress | Pack: BGA | D/C: 11+

Availability:: Supply Ability: 1/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-04-28

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Part Number:CY7C1062DV33-10BGI
US $16.10 - 16.39
Quantity:

piece

Product Summary

The CY7C1062DV33-10BGI is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. Writing to the CY7C1062DV33-10BGI is accomplished by enabling the chip (CE1, CE2 and CE3 LOW) and forcing the Write Enable (WE) input LOW. If Byte Enable A (BA) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). The CY7C1062DV33-10BGI is available in 119-ball plastic ball grid array (PBGA) package.

Parametrics

CY7C1062DV33-10BGI absolute maximum ratings: (1)Storage Temperature : –65°C to +150°C; (2)Ambient Temperature with Power Applied : –55°C to +125°C; (3)Supply Voltage on VCC Relative to GND[2]: –0.5V to +4.6V; (4)DC Voltage Applied to Outputs in High-Z State[2] : –0.5V to VCC + 0.5V, DC Input Voltage[2] : –0.5V to VCC + 0.5V; (5)Current into Outputs (LOW): 20 mA; (6)Static Discharge Voltage: >2001V (per MIL-STD-883, Method 3015); (7)Latch-up Current: >200 mA.

Features

CY7C1062DV33-10BGI features: (1)High speed: tAA = 10 ns; (2)Low active power: ICC = 150 mA @ 10 ns; (3)Low CMOS standby power: ISB2 = 25 mA; (4)Operating voltages of 3.3 ± 0.3V; (5)2.0V data retention; (6)Automatic power-down when deselected; (7)TTL-compatible inputs and outputs; (8)Easy memory expansion with CE1, CE2, and CE3 features; (9)Available in Pb-free 119-ball plastic ball grid array (PBGA)package.